Datasheet

Document Number: 73253
S10-0110-Rev. D, 18-Jan-10
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3
Vishay Siliconix
Si1403BDL
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance (Ω)R
DS(on)
0.00
0.08
0.16
0.24
0.32
0.40
01234
I
D
- Drain Current (A)
V
GS
= 3.6 V
V
GS
= 2.5 V
V
GS
= 4.5 V
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
DS
= 10 V
I
D
= 1.5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0 0.3 0.6 0.9 1.2 1.5
T
J
= 150 °C
T
J
= 25 °C
10
1
0.1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
100
200
300
400
500
048121620
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 1.5 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
012345
I
D
= 1.5 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 0.8 A