Datasheet

ManualsBrandsVISHAY ManualsFETsSI1403BDL-T1-E3, MOSFET

Vishay Siliconix

Si1403BDL

Document Number: 73253

S10-0110-Rev. D, 18-Jan-10

www.vishay.com

P-Channel 2.5-V (G-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

Power MOSFET

• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)I

(A) Q

(Typ.)

- 20

0.150 at V

= - 4.5 V

- 1.5

2.9

0.175 at V

= - 3.6 V

- 1.4

0.265 at V

= - 2.5 V

- 1.2

Marking Code

OD X

Lot Traceability

and Date Code

Part # Code

SOT-363

SC-70 (6-LEADS)

Top View

Ordering Information: Si1403BDL-T1-E3 (Lead (Pb)-free)

Si1403BDL-T1-GE3 (Lead (Pb)-free and Halogen-free)

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

- 20

Gate-Source Voltage

± 12

Continuous Drain Current (T

= 150 °C)

= 25 °C

- 1.5 - 1.4

= 85 °C

- 1.2 - 1.0

Pulsed Drain Current

- 5

Continuous Diode Current (Diode Conduction)

- 0.8 - 0.8

Maximum Power Dissipation

= 25 °C

0.625 0.568

= 85 °C

0.400 0.295

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

t ≤ 5 s

thJA

165 200

°C/W

Steady State 180 220

Maximum Junction-to-Foot (Drain) Steady State

thJF

105 130

Summary of content (10 pages)

PAGE 1
Si1403BDL Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.150 at VGS = - 4.5 V - 1.5 - 20 0.175 at VGS = - 3.6 V - 1.4 0.265 at VGS = - 2.5 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 2.
PAGE 2
Si1403BDL Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.6 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 1.5 A 0.120 0.150 RDS(on) VGS = - 3.6 V, ID = - 1.4 A 0.140 0.175 VGS = - 2.5 V, ID = - 0.8 A 0.220 0.265 gfs VDS = - 10 V, ID = - 1.5 A 3.
PAGE 3
Si1403BDL Vishay Siliconix 0.40 500 0.32 400 0.24 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted VGS = 2.5 V 0.16 VGS = 3.6 V 0.08 VGS = 4.5 V Ciss 300 200 Coss 100 Crss 0.00 0 0 1 2 3 4 0 4 ID - Drain Current (A) 8 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 1.6 VDS = 10 V ID = 1.5 A VGS = 4.5 V ID = 1.5 A 4 3 2 (Normalized) 1.
PAGE 4
Si1403BDL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 10 0.4 8 ID = 250 µA 0.2 Power (W) VGS(th) Variance (V) 0.3 0.1 0.0 6 4 - 0.1 2 - 0.2 - 0.3 - 50 - 25 0 25 50 75 100 125 0 10-2 150 10-1 1 TJ - Temperature (°C) 10 100 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 10 µs 100 µs 1 ms Limited by R DS(on)* I D - Drain Current (A) 1 10 ms 0.1 100 ms 1 s, 100 s, DC 0.01 0.001 0.
PAGE 5
Si1403BDL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations.
PAGE 6
Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.
PAGE 7
AN813 Vishay Siliconix Single-Channel LITTLE FOOTR SC-70 3-Pin and 6-Pin MOSFET Recommended Pad Pattern and Thermal Peformance INTRODUCTION BASIC PAD PATTERNS This technical note discusses pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for single-channel LITTLE FOOT power MOSFETs in the SC-70 package.
PAGE 8
AN813 Vishay Siliconix THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) SC-70 (6-PIN) Thermal performance for the 3-pin SC-70 measured as junction-to-foot thermal resistance is 285_C/W typical, 340_C/W maximum. Junction-to-foot thermal resistance for the 6-pin SC70-6 is 105_C/W typical, 130_C/W maximum — a nearly two-thirds reduction compared with the 3-pin device. The “foot” is the drain lead of the device as it connects with the body.
PAGE 9
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.
PAGE 10
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