Datasheet

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Document Number: 71250
S12-0800-Rev. E, 16-Apr-12
Vishay Siliconix
Si1539DL
This document is subject to change without notice.
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P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
0
2
4
6
8
10
0.0 0.2 0.4 0.6 0.8 1.0
V
DS
= 15 V
I
D
= 0.42 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
1
0.1
V
SD
)V( egatloV niarD-ot-ecruoS -
- Source Current (A)I
S
- 0.4
- 0.2
0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 0.42 A
T
J
- Junction Temperature (°C)
(Normalized)- On-Resistance R
DS(on)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
02468 10
I
D
= 0.42 A
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
3
5
1
2
Power (W)
Time (s)
4
1 100 6001010
-1
10
-2
10
-3