Datasheet

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Document Number: 71250
S12-0800-Rev. E, 16-Apr-12
Vishay Siliconix
Si1539DL
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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
1
0.1
V
SD
)V( egatloV niarD-ot-ecruoS -
- Source Current (A)I
S
- 0.6
- 0.4
- 0.2
0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)
V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.0
0.3
0.6
0.9
1.2
1.5
1.8
02468 10
I
D
= 0.59 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
3
5
1
2
Power (W)
Time (s)
4
1 100 6001010
-1
10
-2
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
00601110
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 400 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM