Datasheet

Document Number: 71250
S12-0800-Rev. E, 16-Apr-12
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3
Vishay Siliconix
Si1539DL
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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
= 10 V thru 4 V
3 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
- On-Resistance (Ω)
R
DS(on)
0.0
0.4
0.8
1.2
1.6
0.0 0.2 0.4 0.6 0.8 1.0
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0.0 0.2 0.4 0.6 0.8 1.0
V
DS
= 15 V
I
D
= 0.59 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
10
20
30
40
50
60
048 12 16 20
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 0.59 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)