Datasheet
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Document Number: 71250
S12-0800-Rev. E, 16-Apr-12
Vishay Siliconix
Si1539DL
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For more information please contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
N-Ch 1 2.6
V
V
DS
= V
GS
, I
D
= - 250 µA
P-Ch - 1 - 2.6
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
N-Ch ± 100
nA
P-Ch ± 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V
N-Ch 1
µA
V
DS
= - 24 V, V
GS
= 0 V
P-Ch - 1
V
DS
= 24 V, V
GS
= 0 V, T
J
= 85 °C
N-Ch 5
V
DS
= - 24 V, V
GS
= 0 V, T
J
= 85 °C
P-Ch - 5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
N-Ch 1
A
V
DS
- 5 V, V
GS
= - 10 V
P-Ch - 1
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 0.59 A
N-Ch 0.410 0.480
V
GS
= - 10 V, I
D
= - 0.42 A
P-Ch 0.800 0.940
V
GS
= 4.5 V, I
D
= 0.2 A
N-Ch 0.600 0.700
V
GS
= - 4.5 V, I
D
= - 0.2 A
P-Ch 1.500 1.700
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 0.59 A
N-Ch 0.75
S
V
DS
= - 15 V, I
D
= - 0.42 A
P-Ch 0.5
Diode Forward Voltage
a
V
SD
I
S
= 0.23 A, V
GS
= 0 V
N-Ch 0.80 1.2
V
I
S
= - 0.23 A, V
GS
= 0 V
P-Ch - 0.86 - 1.2
Dynamic
b
Total Gate Charge
Q
g
N-Channel
V
DS
= 15 V, V
GS
= 10 V, I
D
= 0.59 A
P-Channel
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 0.42 A
N-Ch 0.86 1.4
nC
P-Ch 0.90 1.4
Gate-Source Charge
Q
gs
N-Ch 0.24
P-Ch 0.21
Gate-Drain Charge
Q
gd
N-Ch 0.08
P-Ch 0.17
Tur n - O n D e l ay Time
t
d(on)
N-Channel
V
DD
= 15 V, R
L
= 30
I
D
0.5 A, V
GEN
= 10 V, R
g
= 6
P-Channel
V
DD
= - 15 V, R
L
= 30
I
D
- 0.5 A, V
GEN
= - 10 V, R
g
= 6
N-Ch 5 10
ns
P-Ch 4 10
Rise Time
t
r
N-Ch 8 15
P-Ch 8 15
Turn-Off Delay Time
t
d(off)
N-Ch 8 15
P-Ch 5 10
Fall Time
t
f
N-Ch 7 15
P-Ch 7 15
Source-Drain Reverse Recovery Time
t
rr
I
F
= 0.23 A, dI/dt = 100 A/µs
N-Ch 15 30
I
F
= - 0.23 A, dI/dt = 100 A/µs
P-Ch 20 40