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Vishay Siliconix

Si1539DL

Document Number: 71250

S12-0800-Rev. E, 16-Apr-12

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For more information please contact: pmostechsupport@vishay.com

Complementary 30 V (G-S) MOSFET

FEATURES

• TrenchFET

Power MOSFET

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

Notes:

a. Surface mounted on 1" x 1" FR4 board.

PRODUCT SUMMARY

(V) R

DS(on)

()I

(A)

N-Channel 30

0.480 at V

= 10 V

0.63

0.700 at V

= 4.5 V

0.52

P-Channel - 30

0.940 at V

= - 10 V

- 0.45

1.700 at V

= - 4.5 V

- 0.33

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

Parameter Symbol

N-Channel P-Channel

Unit

5 s Steady State 5 s Steady State

Drain-Source Voltage

30 - 30

Gate-Source Voltage

± 20

Continuous Drain Current (T

= 150 °C)

= 25 °C

0.63 0.54 - 0.45 - 0.42

= 85 °C

0.45 0.43 - 0.32 - 0.31

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

0.25 0.23 - 0.25 - 0.23

Maximum Power Dissipation

= 25 °C

0.30 0.27 0.30 0.27

= 85 °C

0.16 0.14 0.16 0.14

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150 °C

SOT-363

SC-70 (6-LEADS)

Top View

Marking Code

RC XX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si1539DL-T1-E3 (Lead (Pb)-free)

Si1539DL-T1-GE3 (Lead (Pb)-free and Halogen-free)

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

t  5 s

thJA

360 415

°C/W

Steady State 400 460

Maximum Junction-to-Foot (Drain) Steady State

thJF

300 350

Summary of content (12 pages)

PAGE 1
Si1539DL Vishay Siliconix Complementary 30 V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () • TrenchFET® Power MOSFET • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 ID (A) 0.480 at VGS = 10 V 0.63 0.700 at VGS = 4.5 V 0.52 0.940 at VGS = - 10 V - 0.45 1.700 at VGS = - 4.5 V - 0.
PAGE 2
Si1539DL Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VGS(th) Gate Threshold Voltage N-Ch 1 2.6 VDS = VGS, ID = - 250 µA P-Ch -1 - 2.
PAGE 3
Si1539DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 1.0 VGS = 10 V thru 4 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 0.8 0.6 0.4 3V 0.2 0.6 0.4 TC = 125 °C 0.2 - 55 °C 25 °C 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) 0.0 0.0 3.0 0.5 1.0 1.5 Output Characteristics 2.5 3.0 3.5 4.0 Transfer Characteristics 60 1.6 50 Ciss 1.2 0.8 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.
PAGE 4
Si1539DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 1.8 ID = 0.59 A RDS(on) - On-Resistance (Ω) I S - Source Current (A) 1.5 TJ = 150 °C TJ = 25 °C 1.2 0.9 0.6 0.3 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0 1.2 10 On-Resistance vs. Gate-to-Source Voltage 0.4 5 0.2 4 ID = 250 µA 0 Power (W) V GS(th) Variance (V) Source-Drain Diode Forward Voltage 2 4 6 8 VGS - Gate-to-Source Voltage (V) - 0.2 - 0.4 3 2 1 - 0.
PAGE 5
Si1539DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 1.0 TC = - 55 °C VGS = 10 V thru 5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 0.8 0.6 4V 0.4 0.
PAGE 6
Si1539DL Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.6 VDS = 15 V ID = 0.42 A R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 8 6 4 2 0 0.0 0.2 0.4 0.6 0.8 Qg - Total Gate Charge (nC) VGS = 10 V ID = 0.42 A 1.4 1.2 1.0 0.8 0.6 - 50 1.0 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 3.0 1 ID = 0.
PAGE 7
Si1539DL Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 400 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.
PAGE 8
Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.
PAGE 9
AN814 Vishay Siliconix Dual-Channel LITTLE FOOTR SC-70 6-Pin MOSFET Recommended Pad Pattern and Thermal Performance INTRODUCTION This technical note discusses the pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for dual-channel LITTLE FOOT power MOSFETs in the SC-70 package.
PAGE 10
AN814 Vishay Siliconix SC-70 (6-PIN) PD + Dual EVB Elevated Ambient 60 _C TJ(max) * TA Rq JA o o PD + 150 Co* 25 C 400 CńW PD + 312 mW PD + TJ(max) * TA Rq JA o o PD + 150 Co* 60 C 400 CńW PD + 225 mW NOTE: Although they are intended for low-power applications, devices in the 6-pin SC-70 will handle power dissipation in excess of 0.2 W.
PAGE 11
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.
PAGE 12
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