Datasheet

SFH628A, SFH6286
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 28-Feb-14
2
Document Number: 83722
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
DC forward current I
F
± 50 mA
Surge forward current t 10 μs I
FSM
± 2.5 A
Power dissipation P
diss
76 mW
OUTPUT
Collector emitter voltage V
CEO
55 V
Emitter collector voltage V
ECO
7V
Collector current
I
C
50 mA
t
p
1 ms I
C
100 mA
Power dissipation P
diss
150 mW
COUPLER
Isolation test voltage
V
ISO
5300 V
RMS
Creepage distance 7mm
Clearance distance 7mm
Insulation thickness between
0.4 mm
Comparative tracking index per DIN IEC112/
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Ω
Storage temperature range T
stg
-55 to +150 °C
Ambient temperature range T
amb
-55 to +100 °C
Soldering temperature
(1)
max. 10 s, dip soldering distance
T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= ± 5 mA V
F
1.1 1.5 V
Capacitance V
R
= 0 V, f = 1 MHz C
O
45 pF
Thermal resistance R
thja
1070 K/W
OUTPUT
Collector emitter leakage current V
CE
= 10 V I
CEO
10 200 nA
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz C
CE
7pF
Thermal resistance R
thja
500 K/W
COUPLER
Collector emitter saturation
voltage
I
F
= ± 1 mA, I
C
= 0.5 mA
SFH628A-2 V
CEsat
0.25 0.4 V
SFH6286-2 V
CEsat
0.25 0.4 V
I
F
= ± 1 mA, I
C
= 0.8 mA
SFH628A-3 V
CEsat
0.25 0.4 V
SFH6286-3 V
CEsat
0.25 0.4 V
I
F
= ± 1 mA, I
C
= 1.25 mA
SFH628A-4 V
CEsat
0.25 0.4 V
SFH6286-4 V
CEsat
0.25 0.4 V