Datasheet

SFH620A, SFH6206
www.vishay.com
Vishay Semiconductors
Rev. 2.3, 31-Aug-15
2
Document Number: 83675
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Still air, coupler soldered to PCB or base.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
DC forward current I
F
± 60 mA
Surge forward current t
p
≤ 10 μs I
FSM
± 2.5 A
Power dissipation P
diss
100 mW
OUTPUT
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
7V
Collector current
I
C
50 mA
t
p
≤ 1 μs I
C
100 mA
Power dissipation P
diss
150 mW
COUPLER
Total power dissipation P
tot
250 mW
Storage temperature range T
stg
-55 to +150 °C
Ambient temperature range T
amb
-55 to +100 °C
Junction temperature T
j
100 °C
Soldering temperature
(1)
max. 10 s, dip soldering distance
to seating plane ≥ 1.5 mm
T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= ± 60 mA V
F
1.25 1.65 V
Capacitance V
R
= 0 V, f = 1 MHz C
O
50 pF
Thermal resistance R
thja
750 K/W
OUTPUT
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz C
CE
6.8 pF
Thermal resistance R
thja
500 °C/W
COUPLER
Collector emitter saturation voltage I
F
= ± 10 mA, I
C
= 2.5 mA V
CEsat
0.25 0.4 V
Coupling capacitance C
C
0.2 pF
Collector emitter leakage current V
CE
= 10 V
SFH620A-1 I
CEO
250nA
SFH6206-1 I
CEO
250nA
SFH620A-2 I
CEO
250nA
SFH6206-2 I
CEO
250nA
SFH620A-3 I
CEO
5 100 nA
SFH6206-3 I
CEO
5 100 nA