Datasheet

VISHAY
SFH615A / SFH6156
Document Number 83671
Rev. 1.6, 20-Jul-04
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
0
50
100
150
200
0 25 50 75 100 125 150
18483
P –Power Dissipation (mW)
tot
Phototransistor
Diode
T
amb
– Ambient Temperature ( qC )
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage I
F
= 60mA V
F
1.25 1.65 V
Reverse current V
R
= 6.0 V I
R
0.01 10 µA
Capacitance V
R
= 0 V, f = 1.0 MHz C
O
13 pF
Thermal resistance R
thja
750 K/W
Parameter Test condition Part Symbol Min Typ. Max Unit
Collector-emitter capacitance V
CE
= 5.0 V, f = 1.0 MHz C
CE
5.2 pF
Thermal resistance R
thja
500 K/W
Collector-emitter leakage
current
V
CE
= 10 V SFH615A-1
SFH6156-1
I
CEO
2.0 50 nA
SFH615A-2
SFH6156-2
I
CEO
2.0 50 nA
SFH615A-3
SFH6156-3
I
CEO
5.0 100 nA
SFH615A-4
SFH6156-4
I
CEO
5.0 100 nA
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter saturation
voltage
I
F
= 10 mA, I
C
= 2.5 mA V
CEsat
0.25 0.4 V
Coupling capacitance C
C
0.4 pF