Datasheet

www.vishay.com For technical questions, contact: [e-mail]
Document Number: 83663
594 Rev. 1.4, 10-Dec-08
SFH601
Vishay Semiconductors
Optocoupler, Phototransistor
Output, with Base Connection
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
OUTPUT
Collector emitter voltage V
CE
100 V
Emitter base voltage V
EBO
7V
Collector current
I
C
50 mA
t = 1.0 ms I
C
100 mA
Power dissipation P
diss
150 mW
COUPLER
Isolation test voltage
between emitter and detector
t = 1.0 s V
ISO
5300 V
RMS
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
≥ 10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
≥ 10
11
Ω
Storage temperature range T
stg
- 55 to + 150 °C
Ambient temperature range T
amb
- 55 to +100 °C
Junction temperature T
j
100 °C
Soldering temperature
(2)
max. 10 s, dip soldering:
distance to seating plane ≥ 1.5 mm
T
sld
260 °C
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 60 mA V
F
1.25 1.65 V
Breakdown voltage I
R
= 10 µA V
BR
6V
Reverse current V
R
= 6 V I
R
0.01 10 µA
Capacitance V
F
= 0 V, f = 1 MHz C
O
25 pF
Thermal resistance R
thja
750 K/W
OUTPUT
Collector emitter capacitance f = 1 mHz, V
CE
= 5 V C
CE
6.8 pF
Collector base capacitance f = 1 mHz, V
CB
= 5 V C
CB
8.5 pF
Emitter base capacitance f = 1 mHz, V
EB
= 5 V C
EB
11 pF
Thermal resistance R
thja
500 K/W
Collector emitter leakage current V
CE
=10 V
SFH601-1 I
CEO
250nA
SFH601-2 I
CEO
250nA
SFH601-3 I
CEO
5 100 nA
SFH601-4 I
CEO
5 100 nA
COUPLER
Saturation voltage collector emitter I
F
= 10 mA, I
C
= 2.5 mA V
CEsat
0.25 0.4 V
Capacitance (input to output) V
I-O
= 0, f = 1 MHz C
IO
0.6 pF
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT