Datasheet

www.vishay.com
2
Document Number 83662
Rev. 1.4, 26-Oct-04
VISHAY
SFH600
Vishay Semiconductors
Output
Coupler
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Parameter Test condition Symbol Value Unit
Collector-emitter voltage V
CE
70 V
Emitter-base voltage V
EB
7.0 V
Collector current I
C
50 mA
t = 1.0 ms I
C
100 mA
Power dissipation P
diss
150 mW
Parameter Test condition Symbol Value Unit
Isolation test voltage (between
emitter and detector referred to
climate DIN 40046, part2,
Nov. 74)
t = 1.0 s V
ISO
5300 V
RMS
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Isolation thickness between
emitter and detector
≥ 0.4 mm
Comparative tracking index per
DIN IEC 112/VDE0303, part1
175
Isolation resistance V
IO
= 500 V, T
amb
= 25 °C R
IO
≥ 10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
≥ 10
11
Ω
Storage temperature range T
stg
- 55 to + 150 °C
Ambient temperature range T
amb
- 55 to + 100 °C
Junction temperature max. 10 s, dip soldering T
j
100 °C
Soldering temperature max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
T
sld
260 °C
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage I
F
= 60 mA V
F
1.25 1.65 V
Breakdown voltage I
R
= 10 µAV
BR
6.0 V
Reverse current V
R
= 6.0 V I
R
0.01 10 µA
Capacitance V
F
= 0 V, f = 1.0 MHz C
O
25 pF
Thermal resistance R
THJamb
750 K/W
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter capacitance f = 1.0 mHz, V
CE
= 5.0 V C
CE
5.2 pF
Collector - base capacitance f = 1.0 mHz, V
CB
= 5.0 V C
CB
6.5 pF
Emitter - base capacitance f = 1.0 mHz, V
CB
= 5.0 V C
EB
9.5 pF
Thermal resistance R
THJamb
500 K/W