Datasheet

SFH1690AT, SFH1690BT, SFH1690CT, SFH1690ABT
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 23-May-13
2
Document Number: 83537
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Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Fig. 1 - Permissible Power Dissipation vs. Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
DC forward current I
F
50 mA
Reverse voltage V
R
6V
Surge forward current t
p
≤ 10 μs I
FSM
2.5 A
Power dissipation P
diss
80 mW
Derate linearly from 25 °C 0.7 mW/°C
OUTPUT
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
7V
Collector current
I
C
50 mA
t
p
≤ 1 ms I
C
100 mW
Power dissipation P
diss
150 mW
Derate linearly from 25 °C 1.5 mW/°C
COUPLER
Isolation test voltage between emitter
and detector
t = 1 s V
ISO
3750 V
RMS
Operating temperature range T
amb
- 55 to + 110 °C
Storage temperature range T
stg
- 55 to + 150 °C
Soldering temperature
max. 10 s dip soldering distance to
seating plane ≥ 1.5 mm
T
sld
260 °C
0
25
50
75
100
125
150
175
0 20 40 60 80 100 120
T
amb
- Ambient Temperature (°C)
17567
P - Power Dissipation (mW)
tot
Phototransistor
Diode