Datasheet

Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.) SFH610/11/15/17A
www.infineon.com/opto • 1-800-777-4363 2 November 23, 1999–15
Characteristics (T
A
=25°C)
Current Transfer Ratio (I
C
/I
F
at V
CE
=5 V) and Collector-Emitter Leakage Current by Dash Number
Description Symbol Unit Condition
Emitter (IR GaAs)
Forward Voltage V
F
1.25 ( ≤ 1.65) V I
F
=60 mA
Reverse Current I
R
0.01 ( ≤ 10) µ AV
R
=6 V
Capacitance C
0
13 pF V
R
=0 V, f=1 MHz
Thermal Resistance R
thJA
750 K/W
Detector (Si Phototransistor)
Capacitance C
CE
5.2 pF V
CE
=5 V, f=1 MHz
Thermal Resistance R
thJA
500 K/W
Package
Collector-Emitter Saturation Voltage V
CESAT
0.25 ( ≤ 0.4) V I
F
=10 mA, I
C
=2.5 mA
Coupling Capacitance C
C
0.4 pF
Description -1 -2 -3 -4
I
C
/ I
F
(I
F
=10 mA) 40–80 63–125 100–200 160–320 %
I
C
/ I
F
(I
F
=1 mA) 30 (>13) 45 (>22) 70 (>34) 90 (>56)
Collector-Emitter Leakage Current, I
CEO
V
CE
=10 V
2 (
≤ 50) 2 ( ≤ 50) 5 ( ≤ 100) 5 ( ≤ 100) nA
I
F
=10 mA, V
CC
=5 V, T
A
=25°C
Load Resistance R
L
75 Ω
Turn-on Time t
ON
3.0 µs
Rise Time t
R
2.0
Turn-off Time t
OFF
2.3
Fall Time t
F
2.0
Cut-off Frequency F
CO
250 kHz
Parameter Sym.
Dash No.
Unit
-1
I
F
=20 mA
-2 and -3
I
F
=10 mA
-4
I
F
=5 mA
Turn-on Time t
ON
3.0 4.2 6.0 µs
Rise Time t
R
2.0 3.0 4.6
Turn-off Time t
OFF
18 23 25
Fall Time t
F
11 14 15
Switching Times (Typical)
Linear Operation (without saturation)
Switching Operation (with saturation)
R
L
=75 Ω
V
CC
=5 V
I
C
47 Ω
I
F
I
F
1 KΩ
V
CC
=5 V
47 Ω