Datasheet
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH610/17A
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–229 March 27, 2000-00
Characteristics
(
T
A
=25
°
C)
Current Transfer Ratio
(
I
C
/
I
F
at
V
CE
=5.0 V)
and Collector-Emitter Leakage Current by Dash Number
Description Symbol Unit Condition
Emitter (IR GaAs)
Forward Voltage
V
F
1.25 (
≤
1.65) V
I
F
=60 mA
Reverse Current
I
R
0.01 (
≤
10)
µ
A
V
R
=6.0 V
Capacitance
C
0
13 pF
V
R
=0 V, f=1.0 MHz
Thermal Resistance
R
thJA
750 K/W
Detector (Si Phototransistor)
Capacitance
C
CE
5.2 pF
V
CE
=5 V, f=1.0 MHz
Thermal Resistance
R
thJA
500 K/W
Package
Collector-Emitter Saturation Voltage
V
CEsat
0.25 (
≤
0.4) V
I
F
=10 mA,
I
C
=2.5 mA
Coupling Capacitance
C
C
0.4 pF
Description -1 -2 -3 -4
I
C
/
I
F
(
I
F
=10 mA) 40–80 63–125 100–200 160–320 %
I
C
/
I
F
(
I
F
=1.0 mA) 30 (>13) 45 (>22) 70 (>34) 90 (>56)
Collector-Emitter Leakage Current,
I
CEO
V
CE
=10 V
2.0 (
≤
50) 2.0 (
≤
50) 5.0 (
≤
100) 5.0 (
≤
100) nA
I
F
=10 mA,
V
CC
=5.0 V,
T
A
=25
°
C
Load Resistance
R
L
75
Ω
Turn-on Time
t
ON
3.0
µ
s
Rise Time
t
R
2.0
Turn-off Time
t
OFF
2.3
Fall Time
t
F
2.0
Cut-off Frequency F
CO
250 kHz
Parameter Sym.
Dash No.
Unit
-1
I
F
=20 mA
-2 and -3
I
F
=10 mA
-4
I
F
=5.0 mA
Turn-on Time
t
ON
3.0 4.2 6.0
µ
s
Rise Time
t
R
2.0 3.0 4.6
Turn-off Time t
OFF
18 23 25
Fall Time t
F
11 14 15
Figure 1. Switching Times (Typical)
Linear Operation (without saturation)
Figure 2. Switching Operation
(with saturation)
R
L
=75 Ω
V
CC
=5 V
I
C
47 Ω
I
F
V
CC
=5.0 V
47 Ω
1.0 k Ω
I
F