Instruction Manual

Document Number: 93177 For technical questions, contact: [e-mail]
www.vishay.com
Revision: 14-May-08 5
SD553C..S50L Series
Fast Recovery Diodes
(Hockey PUK Version), 560 A
Vishay High Power Products
Fig. 11 - Typical Forward Recovery Characteristics
Fig. 12 - Recovery Time Characteristics
Fig. 13 - Recovery Charge Characteristics
Fig. 14 - Recovery Current Characteristics
Fig. 15 - Maximum Total Energy Loss
Per Pulse Characteristics
0
50
100
150
200
250
300
350
400
0 200 400 600 800 1000 1200 1400 1600 1800 2000
Forward Recovery (V)
T = 125°C
T = 25°C
J
J
SD553C..S50L Series
Rate Of Rise Of Forward Current - di/dt (A/us)
I
V
FP
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
10.5
10 100 1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
500 A
I = 15 00 A
Sine Pulse
1000 A
SD 553 C ..S50L Se rie s
T = 125 °C; V > 100V
J
FM
r
0
500
100 0
150 0
200 0
250 0
0 50 100 150 200 250 300
Rate Of Fall O f Forward Current - di/dt (A/µs)
SD 553C ..S5 0L Series
T = 1 2 5 °C ; V > 1 00 V
I = 15 00 A
Sine Pu l se
FM
1000 A
500 A
J r
Ma xim um Re ve rse R eco ve ry C h a rg e - Q rr ( µC )
0
100
200
300
400
500
600
700
800
0 5 0 100 150 200 250 30 0
I = 1500 A
Sine Pulse
FM
1000 A
500 A
Rate Of Fall O f Forward Current - di/dt (A/µs)
M ax im um Rev erse Rec ov ery Cu rrent - Irr (A )
SD 5 5 3 C .. S5 0 L S e r ies
T = 1 2 5 °C ; V > 1 00 V
J
r
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Basewidth (µs)
Peak Forward Current (A)
10 joules per pulse
6
4
Sinu soid al Pu lse
SD553C..S50L Series
0.8
0.6
0.4
0.2
T = 1 25° C , V = 1 50 0 V
J
RRM
dv/dt = 1000V/µs
tp