Datasheet

SD103AW, SD103BW, SD103CW
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Vishay Semiconductors
Rev. 1.7, 23-Feb-18
2
Document Number: 85681
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
Fig. 2 - Typical High Current Forward Conduction Curve
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
Fig. 4 - Typical Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Leakage current
V
R
= 30 V SD103AW I
R
5μA
V
R
= 20 V SD103BW I
R
5μA
V
R
= 10 V SD103CW I
R
5μA
Forward voltage drop
I
F
= 20 mA V
F
370 mV
I
F
= 200 mA V
F
600 mV
Diode capacitance V
R
= 0 V, f = 1 MHz C
D
50 pF
Reverse recovery time
I
F
= I
R
= 50 mA to 200 mA,
recover to 0.1 I
R
t
rr
10 ns
18488
0.01
1000
100
0.1
1
10
0 0.4 0.6 0.8 1.00.2
I - Forward Current (mA)
F
V
F
- Forward Voltage (V)
18489
4
5
3
2
0
1
0.5 1.001.5
I - Forward Current (A)
F
V
F
- Forward Voltage (V)
duty cycle = 2 %
t
p
= 300 ms
0.01
0.1
1
10
100
1000
0 5 10 15 20 25 30 35 40 45 50
V - Reverse Voltage (V)
I
R
- Reverse Current (µA)
R
20084
75 °C
50 °C
25 °C
100 °C
T
amb
= 125 °C
18491
10 20 30 40 050
C- Diode Capacitance (pF)
D
V
R
- Reverse Voltag e (V)
100
10
1