Datasheet

SD101A, SD101B, SD101C
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 06-May-13
2
Document Number: 85629
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Reverse Voltage
Fig. 2 - Diode Capacitance vs. Reverse Voltage
Fig. 3 - Forward Current vs. Forward Voltage

ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 10 μA
SD101A V
(BR)
60 V
SD101B V
(BR)
50 V
SD101C V
(BR)
40 V
Leakage current
V
R
= 50 V SD101A I
R
200 nA
V
R
= 40 V SD101B I
R
200 nA
V
R
= 30 V SD101C I
R
200 nA
Forward voltage drop
I
F
= 1 mA
SD101A V
F
410 mV
SD101B V
F
400 mV
SD101C V
F
390 mV
I
F
= 15 mA
SD101A V
F
1000 mV
SD101B V
F
950 mV
SD101C V
F
900 mV
Diode capacitance V
R
= 0 V, f = 1 MHz
SD101A C
D
2.0 pF
SD101B C
D
2.1 pF
SD101C C
D
2.2 pF
I
R
- Reverse Current (μA)
0.01
0.1
1
10
100
0 101520253035404550
V
R
- Reverse Voltage (V)
16204
T
j
= 125 °C
T
j
= 100 °C
T
j
= 75 °C
T
j
= 50 °C
T
j
= 25 °C
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 101520253035404550
V
R
- Reverse Voltage (V)
16205
C
D
- Diode Capacitance (pF)
T
j
= 25 °C
5
0.01
0.10
1.00
10.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
16206