Datasheet

SB3H90, SB3H100
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Vishay General Semiconductor
Revision: 13-Aug-13
3
Document Number: 88720
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Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
100
Pulse Width = 300 μs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
T
J
= 175 °C
20
40
60
80
100
0.01
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
100
1000
0.1
10
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.1
1
10
0.1
10
1
100
100
0
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)