Datasheet

SB3H90, SB3H100
www.vishay.com
Vishay General Semiconductor
Revision: 13-Aug-13
1
Document Number: 88720
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Schottky Plastic Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capabilitmy
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in middle voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
90 V, 100 V
I
FSM
100 A
V
F
0.65 V
I
R
20 μA
T
J
max. 175 °C
Package DO-201AD
Diode variations Single
DO-201AD
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SB3H90 SB3H100 UNIT
Maximum repetitive peak reverse voltage V
RRM
90 100 V
Maximum working reverse voltage V
RWM
90 100 V
Maximum DC blocking voltage V
DC
90 100 V
Maximum average forward rectified current at T
L
= 90 °C I
F(AV)
3.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
100 A
Peak repetitive reverse surge current at t
p
= 2.0 μs, 1 kHz I
RRM
1.0 A
Critical rate of rise of reverse voltage dV/dt 10 000 V/μs
Storage temperature range T
STG
- 55 to + 175 °C
Maximum operating junction temperature T
J
175 °C