Datasheet

S07B, S07D, S07G, S07J, S07M
www.vishay.com
Vishay Semiconductors
Rev. 2.2,, 18-Mar-15
2
Document Number: 85733
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Note
(1)
Mounted on epoxy substrate with 3 mm x 3 mm Cu pads ( 40 μm thick)
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Typical Instantaneous Forward Characteristics
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
180 K/W
Operating junction and storage temperature range T
j
, T
stg
-65 to +175 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Instantaneous forward voltage I
F
= 1 A
(1)
S07B V
F
1.1 V
S07D V
F
1.1 V
S07G V
F
1.1 V
S07J V
F
1.1 V
S07M V
F
1.1 V
Maximum DC reverse current at
rated DC blocking voltage
T
A
= 25 °C
S07B I
R
10 μA
S07D I
R
10 μA
S07G I
R
10 μA
S07J I
R
10 μA
S07M I
R
10 μA
T
A
= 125 °C
S07B I
R
50 μA
S07D I
R
50 μA
S07G I
R
50 μA
S07J I
R
50 μA
S07M I
R
50 μA
Reverse recovery time
I
F
= 0.5 A, I
R
= 1 A,
I
rr
= 0.25 A
S07B t
rr
1800 ns
S07D t
rr
1800 ns
S07G t
rr
1800 ns
S07J t
rr
1800 ns
S07M t
rr
1800 ns
Typical capacitance 4 V, 1 MHz
S07B C
j
4pF
S07D C
j
4pF
S07G C
j
4pF
S07J C
j
4pF
S07M C
j
4pF
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Average Forward Rectied Current - I
FAV
[A]
Ambient Temperature -T
amb
[°C]
R
thJA
= 30K/W
R
thJA
= 150K/W
22773
100
1000
600 700 800 900 1000 1100
Instantaneous Forward Current (mA)
Instantaneous Forward Voltage (mV)
T
J
= 150 °C
T
J
= 25 °C
T
J
= 100 °C
17376