Datasheet

PB3506, PB3508, PB3510
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Vishay General Semiconductor
Revision: 26-Jun-13
3
Document Number: 84807
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Fig. 3 - Forward Power Dissipation
Fig. 4 - Typical Forward Characteristics Per Diode
Fig. 5 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
0 4 8 121620 40
0
10
30
40
90
Average Forward Current (A)
Forward Power Dissipation (W)
20
70
60
50
322824
80
36
0.4 1.2
10
0.1
1
100
0.6 0.8 1.0
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
1.10.5 0.7 0.9
T
A
= 100 °C
T
A
= 85 °C
1000
2010 604030 50 70 90 10080
0.01
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
0.1
T
A
= 100 °C
T
A
= 85 °C
0.1
1
10
100
10
1000
Reverse Voltage (V)
Junction Capacitance (pF)
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p