Datasheet

PB3506, PB3508, PB3510
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Vishay General Semiconductor
Revision: 26-Jun-13
2
Document Number: 84807
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Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: 10 ms pulse width
Notes
(1)
With 60 W air cooled heatsink
(2)
Without heatsink, free air

RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Forward Current Derating Curve
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum instantaneous forward
voltage per diode
(1)
I
F
= 17.5 A
T
A
= 25 °C
V
F
1.00 1.10
V
T
A
= 125 °C 0.90 1.00
Reverse current per diode
(2)
rated V
R
T
A
= 25 °C
I
R
-10
μA
T
A
= 125 °C 115 500
Typical junction capacitance per diode 4.0 V, 1 MHz C
J
105 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL PB3506 PB3508 PB3510 UNIT
Typical thermal resistance
R
JC
(1)
0.8
°C/W
R
JA
(2)
20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (G) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
PB3506-E3/45 7.49 45 20 Tube
0
40
80
160
0
5
15
20
25
40
Case Temperature (°C)
Average Forward Output Current (A)
10
20
60
120
With Heatsink
Sine-Wave, R-Load
100
140
30
T
C
Measurement
35
0
1
2
3
5
Ambient Temperature (°C)
Average Forward Rectified Current (A)
0
50
25
75
100
125
150
4
Without Heatsink
Sine-Wave, R-Load
Free Air, T
A