Datasheet

VS-MUR1620CTPbF, VS-MUR1620CT-N3
www.vishay.com
Vishay Semiconductors
Revision: 11-Aug-11
2
Document Number: 94078
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DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - - 35
ns
I
F
= 0.5 A, I
R
= 1.0 A, I
REC
= 0.25 A - - 25
T
J
= 25 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
-20-
T
J
= 125 °C - 34 -
Peak recovery current I
RRM
T
J
= 25 °C - 1.7 -
A
T
J
= 125 °C - 4.2 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 23 -
nC
T
J
= 125 °C - 75 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
- 65 - 175 °C
Thermal resistance,
junction to case per leg
R
thJC
--3.0
°C/W
Thermal resistance,
junction to ambient per leg
R
thJA
--50
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and
greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-220AB MUR1620CT