Datasheet

MSS1P3, MSS1P4
www.vishay.com
Vishay General Semiconductor
Revision: 17-Jan-14
1
Document Number: 89019
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Surface Mount Schottky Barrier Rectifiers
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
FEATURES
• Very low profile - typical height of 0.65 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width  40 ms
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
30 V, 40 V
I
FSM
25 A
V
F
at I
F
= 1.0 A 0.41 V
T
J
max. 150 °C
Package MicroSMP
Diode variations Single
MicroSMP
eSMP
®
Series
Top View
Bottom View
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MSS1P3 MSS1P4 UNIT
Device marking code 13 14
Maximum repetitive peak reverse voltage V
RRM
30 40 V
Maximum average forward rectified current (fig. 1) I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
25 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum instantaneous
forward voltage
I
F
= 0.5 A
T
J
= 25 °C
V
F
(1)
0.41 -
V
I
F
= 1.0 A 0.48 0.55
I
F
= 0.5 A
T
J
= 125 °C
0.32 -
I
F
= 1.0 A 0.41 0.46
Maximum reverse current Rated V
R
T
J
= 25 °C
I
R
(2)
8.5 200 μA
T
J
= 125 °C 4.5 15 mA
Typical junction capacitance 4.0 V, 1 MHz C
J
50 - pF