Datasheet

MCL103A, MCL103B, MCL103C
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Vishay Semiconductors
Rev. 1.7, 09-May-12
2
Document Number: 85632
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 4 - Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 10 μA
MCL103A V
(BR)
40 V
MCL103B V
(BR)
30 V
MCL103C V
(BR)
20 V
Leakage current
V
R
= 30 V MCL103A I
R
5μA
V
R
= 20 V MCL103B I
R
5μA
V
R
= 10 V MCL103C I
R
5μA
Forward voltage drop
I
F
= 20 mA V
F
370 mV
I
F
= 200 mA V
F
600 mV
Diode capacitance V
R
= 0 V, f = 1 MHz C
D
50 pF
Reverse recovery time
I
F
= I
R
= 50 mA to 200 mA,
recovery to 0.1 I
R
t
rr
10 ns
I
F
- Forward Current (mA)
0 100 200 300 400 500 600 700 800 900 1000
V
F
- Forward Voltage (mV)
16765
1000
100
10
1
0.1
0.01
0.001
I
F
- Forward Current (A)
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0
V
F
- Forward Voltage (V)
16766
1
10
100
1000
10 000
20 40 60 800 100 120 140 160
T
j
- Junction Temperature (°C)
16767
I
R
- Reverse Current (µA)
0
5
10
15
20
25
30
0 1015202530
V
R
- Reverse Voltage (V) 16768
C
D
- Diode Capacitance (pF)
f = 1 MHz
5