Datasheet

Schottky Rectifier, 1.0 A
VS-MBRS190TRPbF, VS-MBRS1100TRPbF
Vishay Semiconductors
Document Number: 94315 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 05-Jul-10 [e-mail]
, [e-mail], [e-mail] 1
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The VS-MBRS190TRPbF, VS-MBRS1100TRPbF surface
mount Schottky rectifier has been designed for applications
requiring low forward drop and very small foot prints on PC
boards. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
PRODUCT SUMMARY
Package DO-214AA (SMB)
I
F(AV)
1 A
V
R
90 V, 100 V
V
F
at I
F
0.78 V
I
RM
1 mA at 125 °C
T
J
max. 175 °C
Diode variation Single die
E
AS
1.0 mJ
Cathode
Anode
SMB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 1.0 A
V
RRM
90/100 V
I
FSM
t
p
= 5 μs sine 870 A
V
F
1.0 Apk, T
J
= 125 °C 0.63 V
T
J
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRS190TRPbF VS-MBRS1100TRPbF UNITS
Maximum DC reverse voltage V
R
90 100 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
50 % duty cycle at T
L
= 147 °C, rectangular waveform 1.0
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
870
10 ms sine or 6 ms rect. pulse 50
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 0.5 A, L = 8 mH 1.0 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.5 A