Datasheet

MBR10Hxx, MBRF10Hxx, MBRB10Hxx
www.vishay.com
Vishay General Semiconductor
Revision: 20-Jan-14
1
Document Number: 88667
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High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
RRM
90 V, 100 V
I
FSM
250 A
V
F
0.64 V
I
R
4.5 μA
T
J
max. 175 °C
Package
TO-220AC, ITO-220AC,
TO-263AB
Diode variations Single
PIN 2
PIN 1
TO-263AB
CASE
PIN 2
PIN 1
TO-220AC
MBR10H90
MBR10H100
ITO-220AC
MBRF10H90
MBRF10H100
MBRB10H90
MBRB10H100
PIN 1 K
PIN 2 HEATSINK
1
2
1
2
K
1
2
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR10H90 MBR10H100 UNIT
Maximum repetitive peak reverse voltage V
RRM
90 100
VWorking peak reverse voltage V
RWM
90 100
Maximum DC blocking voltage V
DC
90 100
Maximum average forward rectified current I
F(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
250
Peak repetitive reverse current at t
p
= 2.0 µs, 1 kHz I
RRM
0.5
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
- 65 to 175 °C
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min V
AC
1500 V