Datasheet

MBR25xxCT, MBRF25xxCT, MBRB25xxCT
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Vishay General Semiconductor
Revision: 08-Jan-15
3
Document Number: 88675
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RATINGS AND CHARACTERISTICS CURVES (T
C
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0
6
18
12
30
0
50
100
150
24
Resistive or Inductive Load
Average Forward Current (A)
Case Temperature (°C)
0
25
75
50
125
100
150
1 100
10
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
100
10
1.0
0.1
0.01
MBR2535CT, MBR2545CT
MBR2550CT, MBR2560CT
0 0.20.1 0.5 1.00.40.3 0.6 0.7 0.8 0.9
T
J
= 150 °C
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
1
10
100
0.01
0.001
0.1
MBR2535CT, MBR2545CT
MBR2550CT, MBR2560CT
200 10040 60 80
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
101
100
1000
10 000
100
0.1
MBR2535CT, MBR2545CT
MBR2550CT, MBR2560CT
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Reverse Voltage (V)
Junction Capacitance (pF)
0.01
101
100
10
100
0.1
0.1
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)