Datasheet

VS-MBR4060WTPbF, VS-MBR4060WT-N3
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Vishay Semiconductors
Revision: 30-Aug-11
2
Document Number: 94296
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
(1)
20 A
T
J
= 25 °C 0.72
V
T
J
= 125 °C 0.62
Maximum instantaneous reverse current I
RM
T
J
= 25 °C
Rated DC voltage
1.0
mA
T
J
= 125 °C 100
Maximum junction capacitance C
T
V
R
= 5 V
DC,
(test signal range 100 kHz to 1 MHz) 25 °C 720 pF
Typical series inductance L
S
Measured from top of terminal to mounting plane 7.5 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 150 °C
Maximum thermal resistance,
junction to case per package
R
thJC
DC operation 2.20
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 1.10
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation 50
Approximate weight
6g
0.21 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AC MBR4060WT