Datasheet

MBR3035PT, MBR3045PT, MBR3050PT, MBR3060PT
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Vishay General Semiconductor
Revision: 11-Jun-13
3
Document Number: 88676
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Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
100
10
1
0.1
0.01
0 0.20.1 0.5 1.00.40.3 0.6 0.7 0.8 0.9
T
J
= 150 °C
T
J
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
MBR3035PT, MBR3045PT
MBR3050PT, MBR3060PT
1
10
100
0.01
0.001
0.1
200 10040 60 80
T
J
= 25 °C
T
J
= 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
J
= 125 °C
MBR3035PT, MBR3045PT
MBR3050PT, MBR3060PT
101
100
1000
10 000
100
0.1
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
MBR3035PT, MBR3045PT
MBR3050PT, MBR3060PT
0.01
101
100
10
100
0.1
0.1
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.142 (3.6)
0.138 (3.5)
0.170
(4.3)
0.086 (2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
0.048 (1.22)
0.044 (1.12)
0.795 (20.2)
0.775 (19.6)
0.840 (21.3)
0.820 (20.8)
1
2
3
0.078 (1.98) REF.
0.203 (5.16)
0.193 (4.90)
10° TYP.
Both Sides
30°
10
1° REF.
Both Sides
0.030 (0.76)
0.020 (0.51)
0.118 (3.0)
0.108 (2.7)