Datasheet

MBR3035PT, MBR3045PT, MBR3050PT, MBR3060PT
www.vishay.com
Vishay General Semiconductor
Revision: 11-Jun-13
1
Document Number: 88676
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Dual Common Cathode Schottky Rectifier
FEATURES
Power pack
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 275 °C max., 10 s, per JESD 22-B106
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Note
(1)
2.0 μs pulse width, f = 1.0 kHz
PRIMARY CHARACTERISTICS
I
F(AV)
30 A
V
RRM
35 V, 45 V, 50 V, 60 V
I
FSM
200 A
V
F
0.60 V, 0.65 V
T
J
max. 150 °C
Package TO-247AD (TO-3P)
Diode variations Common cathode
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 50 60 V
Maximum working peak reverse voltage V
RWM
35 45 50 60 V
Maximum DC blocking voltage V
DC
35 45 50 60 V
Maximum average forward rectified current (fig. 1) I
F(AV)
30 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
200 A
Peak repetitive reverse surge current at t
p
= 2 μs, 1 kHz
per diode
I
RRM
(1)
2.0 1.0 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction temperature range T
J
- 65 to + 150 °C
Storage temperature range T
STG
- 65 to + 175 °C

Summary of content (4 pages)