Datasheet

MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3
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Vishay General Semiconductor
Revision: 11-Sep-13
3
Document Number: 89033
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Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 4 - Typical Reverse Characteristics
Per Diode
Fig. 5 - Typical Junction Capacitance
Per Diode
Fig. 6 - Typical Transient Thermal Impedance
Per Diode
Fig. 7 - Typical Transient Thermal Impedance
Per Diode
0 0.20.1 0.5 1.00.40.3
1
100
10
0.01
0.1
0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
2010 10040 60 80
1
10
0.01
0.1
100
0.001
30 50 70 90
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1 10 100
1000
10 000
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1 MHz
V
sig
= 50 mVp-p
0.01
101
100
10
100
0.1
0.1
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
MBR(B)
0.1
101
100
1
10
0.001
0.1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
MBRF
0.01