Datasheet

MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3
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Vishay General Semiconductor
Revision: 11-Sep-13
2
Document Number: 89033
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Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width  40 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward SurgeCurrent
Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MAX. UNIT
Maximum instantaneous forward voltage 
per diode
I
F
= 10 A T
C
= 25 °C
V
F
(1)
0.80
VI
F
= 10 A T
C
= 125 °C 0.65
I
F
= 20 A T
C
= 125 °C 0.75
Maximum reverse current per diode at working
peak reverse voltage
T
J
= 25 °C
I
R
(2)
100 µA
T
J
= 125 °C 6.0 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Typical thermal resistance per diode
R
JA
60 - 60
°C/W
R
JC
2.0 3.5 2.0
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR20100CT-E3/4W 1.88 4W 50/tube Tube
ITO-220AB MBRF20100CT-E3/4W 1.75 4W 50/tube Tube
TO-263AB MBRB20100CT-E3/4W 1.38 4W 50/tube Tube
TO-263AB MBRb20100CT-E3/8W 1.38 8W 800/reel Tape and reel
0
4
8
12
20
0
50
100
150
16
Case Temperature (°C)
Average Forward Cu
rrent (A)
Resistive or Inductive Load
MBRF
MBR &
MBRB
40
60
100
80
140
120
160
1 10010
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)