Datasheet

MB2S, MB4S, MB6S
www.vishay.com
Vishay General Semiconductor
Revision: 19-Aug-13
2
Document Number: 88661
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Notes
(1)
On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
(2)
On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad

RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Derating Curve for Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MB2S MB4S MB6S UNIT
Maximum instantaneous forward
voltage per diode
I
F
= 0.4 A V
F
1.0 V
Maximum DC reverse current at rated DC blocking
voltage per diode
T
A
= 25 °C
I
R
5.0
μA
T
A
= 125 °C 100
Typical junction capacitance per diode 4.0 V, 1 MHz C
J
13 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MB2S MB4S MB6S UNIT
Typical thermal resistance
R
JA
(1)
85
°C/W R
JA
(2)
70
R
JL
(1)
20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
MB2S-E3/45 0.22 45 100 Tube
MB2S-E3/80 0.22 80 3000 13" diameter paper tape and reel
0
20
40
60
80
100
120
140
160
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Aluminum Substrate
Glass
Epoxy
PCB
Resistive or Inductive Load
Average Forward Rectified Current (A)
Ambient Temperature (°C)
1
10
100
0
5
10
15
20
25
30
35
f = 50 Hz f = 60 Hz
T
A
= 40 °C
Single Half Sine-Wave
Number of Cycles
Peak Forward Surge Current (A)
1.0 Cycle