Datasheet

MB2S, MB4S, MB6S
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Vishay General Semiconductor
Revision: 19-Aug-13
3
Document Number: 88661
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Fig. 3 - Typical Forward Voltage Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0.01
0.1
1
10
T
J
= 150 °C
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0
20
40
60
80
100
0.01
0.1
1
10
100
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
0.1
1
10
100
0
5
10
15
20
25
30
1000
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.029 (0.74)
0.017 (0.43)
0 to 8°
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.058 (1.47)
0.054 (1.37)
0.252 (6.40)
0.272 (6.90)
0.106 (2.70)
0.090 (2.30)
0.0075 (0.19)
0.0065 (0.16)
0.105 (2.67)
0.095 (2.41)
0.195 (4.95)
0.179 (4.55)
0.144 (3.65)
0.161 (4.10)
0.205 (5.21)
0.195 (4.95)
0.114 (2.90)
0.094 (2.40)
0.038 (0.96)
0.019 (0.48)
0.272 MAX.
(6.91 MAX.)
0.030 MIN.
(0.76 MIN.)
0.023 MIN.
(0.58 MIN.)
0.105 (2.67)
0.095 (2.41)
TO-269AA (MBS)
Mounting Pad Layout