Datasheet

LS4150
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 17-Jul-12
2
Document Number: 85562
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 1 mA V
F
540 620 mV
I
F
= 10 mA V
F
660 740 mV
I
F
= 50 mA V
F
760 860 mV
I
F
= 100 mA V
F
820 920 mV
I
F
= 200 mA V
F
870 1000 mV
Reverse current
V
R
= 50 V I
R
100 nA
V
R
= 50 V, T
j
= 150 °C I
R
100 μA
Diode capacitance V
R
= 0, f = 1 MHz, V
HF
= 50 mV C
D
2.5 pF
Reverse recovery time
I
F
= I
R
= 10 mA to 100 mA,
i
R
= 0.1 x I
R
, R
L
= 100 
t
rr
4ns
0 40 80 120 160 200
0.01
0.1
1
10
100
I - Reverse Current (µA)
R
T
J
- Junction Temperature (°C)
94 9100
Scattering Limit
V
R
= 50 V
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I - Forward Current (mA)
F
V
F
- Forward Voltage (V)
2.0
94 9162
Scattering Limit
T
J
= 25 °C