Datasheet

LS4150
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 17-Jul-12
1
Document Number: 85562
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diode
MECHANICAL DATA
Case: QuadroMELF SOD-80
Weight: approx. 34 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
Silicon epitaxial planar diode
Low forward voltage drop
High forward current capability
QuadroMELF package
AEC-Q101 qualified
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
High speed switch and general purpose
Use in computer and industrial applications
PARTS TABLE
PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS
LS4150 LS4150GS18 or LS4150GS08 - Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
RRM
50 V
Reverse voltage V
R
50 V
Peak forward surge current t
p
= 1 μs I
FSM
4A
Forward continuous current I
F
600 mA
Average forward current V
R
= 0 I
F(AV)
300 mA
Power dissipation P
tot
500 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
R
thJA
300 K/W
Junction temperature T
j
175 °C
Storage temperature range T
stg
- 65 to + 175 °C

Summary of content (4 pages)