Datasheet

LL42, LL43
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 15-May-12
2
Document Number: 85672
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Note
(1)
Pulse test t
p
< 300 μs, t
p
/T < 0.02
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 2 - Typical Reverse Characteristics
Fig. 3 - Typical Reverse Characteristics
Fig. 4 - Typical Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 100 μA (pulsed) V
(BR)
30 V
Leakage current
(1)
V
R
= 25 V I
R
0.5 μA
V
R
= 25 V, T
j
= 100 °C I
R
100 μA
Forward voltage
(1)
I
F
= 200 mA V
F
1000 mV
I
F
= 10 mA LL42 V
F
400 mV
I
F
= 50 mA LL42 V
F
650 mV
I
F
= 2 mA LL43 V
F
260 330 mV
I
F
= 15 mA LL43 V
F
450 mV
Diode capacitance V
R
= 1 V, f = 1 MHz C
D
7pF
Reverse recovery time I
F
= 10 mA, I
R
= 10 mA, i
R
= 1 mA, R
L
= 100  t
rr
5ns
Rectification efficieny R
L
= 15 k, C
L
= 300 pF, f = 45 MHz, V
RF
= 2 V 
v
80 %
200
18442
T
amb
- Ambient Temperature (°C)
250
200
150
100
50
50 100 1500
0
P
tot
- Power Dissipation (mW)
18443
120010008006004002000
I- Forward Current (mA)
F
1000
100
10
1
0.1
0.01
V
F
- Instantaneous Forward Voltage (mV)
25 °C
125 °C
- 40 °C
1000
100
10
1
0.1
0.01
18444
0 1020304050
V
R
- Reverse Voltage (V)
125 °C
100 °C
75 °C
50 °C
25 °C
I - Reverse Leackage Current (µA)
R
18445
14
12
10
8
6
4
2
0
0102030
V
R
- Reverse Voltage (V)
C - Diode Capacitance (pF)
D
51525