Datasheet

LL4148, LL4448
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 27-Mar-13
2
Document Number: 85557
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Reverse Current vs. Reverse Voltage
Fig. 4 - Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 5 mA LL4448 V
F
620 720 mV
I
F
= 50 mA LL4148 V
F
860 1000 mV
I
F
= 100 mA LL4448 V
F
930 1000 mV
Reverse current
V
R
= 20 V I
R
25 nA
V
R
= 20 V, T
j
= 150 °C I
R
50 μA
V
R
= 75 V I
R
5μA
Breakdown voltage
I
R
= 100 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
V
(BR)
100 V
Diode capacitance
V
R
= 0 V, f = 1 MHz,
V
HF
= 50 mV
C
D
4pF
Reverse recovery time
I
F
= I
R
= 10 mA,
i
R
= 1 mA
t
rr
8
ns
I
F
= 10 mA, V
R
= 6 V,
i
R
= 0.1 x I
R
, R
L
= 100 
4
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I-Forward Current (mA)
F
V
F
- Forward Voltage (V)
2.0
94 9096
LL4148
Scattering Limit
T
j
= 25 °C
94 9097
T
j
=25° C
LL4448
Scattering Limit
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I-Forward Current (mA)
F
V
F
-Forward Voltage (V)
2.0
1
10
100
1000
I
R
- Reverse Current (nA)
V
R
- Reverse Voltage (V)
10 1 100
94 9098
T
j
= 25 °C
Scattering Limit
0.1 1 10
0
0.5
1.0
1.5
2.0
3.0
C
D
- Diode Capacitance (pF)
100
94 9099
2.5
V
R
- Reverse Voltage (V)
f = 1 MHz
T
j
= 25 °C