Datasheet

LL103A, LL103B, LL103C
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 18-Dec-13
2
Document Number: 85630
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
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 4 - Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 50 μA
LL103A V
(BR)
40 V
LL103B V
(BR)
30 V
LL103C V
(BR)
20 V
Leakage current
V
R
= 30 V LL103A I
R
5μA
V
R
= 20 V LL103B I
R
5μA
V
R
=10 V LL103C I
R
5μA
Forward voltage drop
I
F
= 20 mA V
F
370 mV
I
F
= 200 mA V
F
600 mV
Diode capacitance V
R
= 0 V, f = 1 MHz C
D
50 pF
Reverse recovery time
I
F
= I
R
= 50 mA to 200 mA,
recover to 0.1 I
R
t
rr
10 ns
I
F
- Forward Current (mA)
0 100 200 300 400 500 600 700 800 900 1000
V
F
- Forward Voltage (mV)
16765
1000
100
10
1
0.1
0.01
0.001
I
F
- Forward Current (A)
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0
V
F
- Forward Voltage (V)
16766
1
10
100
1000
10 000
20 40 60 800 100 120 140 160
T - Junction Temperature (°C)
16767_1
I - Reverse Current (µA)
Reverse voltage
LL103A V = 30 V
LL103B V = 20 V
LL103C V
= 10 V
j
R
R
R
R
0
5
10
15
20
25
30
0 1015202530
V
R
- Reverse Voltage (V) 16768
C
D
- Diode Capacitance (pF)
f = 1 MHz
5