Datasheet

LL101A, LL101B, LL101C
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 15-May-12
2
Document Number: 85626
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Typ. I
F
vs. V
F
for Primary Conduction through the Schottky
Barrier
Fig. 2 - Typ. I
F
of Combination Schottky Barrier and PN Junction
Guard Ring
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction temperature T
j
125 °C
Storage temperature range T
stg
- 65 to + 150 °C
Thermal resistance junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
R
thJA
320 K/W
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Reverse Breakdown Voltage I
R
= 10 μA
LL101A V
(BR)
60 V
LL101B V
(BR)
50 V
LL101C V
(BR)
40 V
Leakage current
V
R
= 50 V LL101A I
R
200 nA
V
R
= 40 V LL101B I
R
200 nA
V
R
= 30 V LL101C I
R
200 nA
Forward voltage drop
I
F
= 1 mA LL101A V
F
0.410 V
I
F
= 1 mA LL101B V
F
0.400 V
I
F
= 1 mA LL101C V
F
0.390 V
I
F
= 15 mA
LL101A V
F
1000 mV
LL101B V
F
950 mV
LL101C V
F
900 mV
Diode capacitance
V
R
= 0 V, f = 1 MHz LL101A C
D
2.0 pF
V
R
= 0 V, f = 1 MHz
LL101B C
D
2.1 pF
LL101C C
D
2.2 pF
Reverse recovery time I
F
= I
R
= 5 mA, recover to 0.1 I
R
t
rr
1ns
gll101a_01
gll101a_02