Datasheet

KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
Document Number: 88531
Revision: 15-Apr-08
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3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0
0.01
0.1
1
10
60 80 10020 40
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 100 °C
T
J
= 125 °C
T
J
= 25 °C
Figure 5. Typical Junction Capacitance Per Diode
10.1 10 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Polarity shown on front side of case: positive lead by beveled corner
0.125 x 45°
(3.2)
0.600 (15.24)
0.560 (14.22)
0.034 (0.86)
0.028 (0.76)
0.105 (2.67)
0.085 (2.16)
0.160 (4.1)
0.140 (3.6)
0.060
(1.52)
0.460 (11.68)
0.50 (12.7) MIN.
0.420 (10.67)
0.500 (12.70)
0.460 (11.68)
0.60
(15.2)
MIN.
DIA.
0.200 (5.08)
0.180 (4.57)
Case Style KBPM