Datasheet

KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
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Document Number: 88531
Revision: 15-Apr-08
2
Note:
(1) JEDEC registered values
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x 12 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
KBP
005M
KBP
01M
KBP
02M
KBP
04M
KBP
06M
KBP
08M
KBP
10M
UNIT
3N246 3N247 3N248 3N249 3N250 3N251 3N252
Maximum instantaneous forward
voltage drop per diode
(1)
1.0 A
1.57 A
V
F
1.0
1.3
V
Maximum DC reverse current
at rated DC blocking voltage
per diode
(1)
T
A
= 25 °C
T
A
= 125 °C
I
R
5.0
500
µA
Typical junction capacitance
per diode
4.0 V, 1 MHz C
J
15 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
KBP
005M
KBP
01M
KBP
02M
KBP
04M
KBP
06M
KBP
08M
KBP
10M
UNIT
3N246 3N247 3N248 3N249 3N250 3N251 3N252
Typical thermal resistance
(1)
R
θJA
R
θJL
40
13
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
KBP06M-E4/45 1.895 45 30 Tube
KBP06M-E4/51 1.895 51 600 Anti-static PVC tray
3N250-E4/45 1.895 45 30 Tube
3N250-E4/51 1.895 51 600 Anti-static PVC tray
Figure 1. Derating Curve Output Rectified Current
0
20 40 60 80 100 120 140 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Capacitive Load
(per leg)
Bridge Output Full Wave Rectified
Current Average (A)
Ambient Temperature (°C)
P. C . B . M o unted on
0.47 x 0.47" (12 x 12 mm)
Copper Pads
60 Hz Resistive or
Inductive Load
=
5.0
10
20
I
pk
I
AV
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
101 100
10
20
30
40
50
60
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
Single Half Sine-Wave
T
J
= 150 °C
T
A
= 25 °C
1.0 Cycle