Datasheet

IRLL110, SiHLL110
www.vishay.com
Vishay Siliconix
S13-0164-Rev. D, 04-Feb-13
2
Document Number: 91320
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Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB Mount)
a
R
thJA
-60
°C/W
Maximum Junction-to-Case (Drain) R
thJC
-40
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 100 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.12 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.0 - 2.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 10 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 100 V, V
GS
= 0 V - - 25
μA
V
DS
= 80 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 5.0 V I
D
= 0.90 A
b
- - 0.54

V
GS
= 4.0 V I
D
= 0.75 A - - 0.76
Forward Transconductance g
fs
V
DS
= 25 V, I
D
= 0.90 A 0.57 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 250 -
pFOutput Capacitance C
oss
-80-
Reverse Transfer Capacitance C
rss
-15-
Total Gate Charge Q
g
V
GS
= 5.0 V
I
D
= 5.6 A, V
DS
= 80 V,
see fig. 6 and 13
b
--6.1
nC Gate-Source Charge Q
gs
--2.6
Gate-Drain Charge Q
gd
--3.3
Turn-On Delay Time t
d(on)
V
DD
= 50 V, I
D
= 5.6 A,
R
g
= 12 , R
D
= 8.4 
-9.3-
ns
Rise Time t
r
-47-
Turn-Off Delay Time t
d(off)
-16-
Fall Time t
f
-18-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.0-
nH
Internal Source Inductance L
S
-6.0-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--1.5
A
Pulsed Diode Forward Current
a
I
SM
--12
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 1.5 A, V
GS
= 0 V
b
--2.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 5.6 A, dI/dt = 100 A/μs
b
- 110 130 ns
Body Diode Reverse Recovery Charge Q
rr
- 0.50 0.65 μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G