Datasheet

IRLL110, SiHLL110
www.vishay.com
Vishay Siliconix
S13-0164-Rev. D, 04-Feb-13
1
Document Number: 91320
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
•R
DS(on)
Specified at V
GS
= 4 V and 5 V
• Fast Switching
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effictiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performace
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 25 mH, R
g
= 25 , I
AS
= 1.5 A (see fig. 12).
c. I
SD
 5.6 A, dI/dt  75 A/μs, V
DD
 V
DS
, T
J
 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
V
DS
(V) 100
R
DS(on)
()V
GS
= 5.0 V 0.54
Q
g
(Max.) (nC) 6.1
Q
gs
(nC) 2.6
Q
gd
(nC) 3.3
Configuration Single
N-Channel MOSFET
G
D
S
SOT-223
G
D
S
D
ORDERING INFORMATION
Package SOT-223 SOT-223
Lead (Pb)-free and Halogen-free SiHLL110-GE3 -
Lead (Pb)-free
IRLL110PbF IRLL110TRPbF
a
SiHLL110-E3 SiHLL110T-E3
a
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
100
V
Gate-Source Voltage V
GS
± 10
Continuous Drain Current V
GS
at 5.0 V
T
C
= 25 °C
I
D
1.5
AT
C
= 100 °C 0.93
Pulsed Drain Current
a
I
DM
12
Linear Derating Factor 0.025
W/°C
Linear Derating Factor (PCB Mount)
e
0.017
Single Pulse Avalanche Energy
b
E
AS
50 mJ
Repetitive Avalanche Current
a
I
AR
1.5 A
Repetitive Avalanche Energy
a
E
AR
0.31 mJ
Maximum Power Dissipation T
C
= 25 °C
P
D
3.1
W
Maximum Power Dissipation (PCB Mount)
e
T
A
= 25 °C 2.0
Peak Diode Recovery dV/dt
c
dV/dt 5.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
d
for 10 s 300