Datasheet

ManualsBrandsVISHAY ManualsFETsIRLD110PBF, MOSFET DIP-4

IRLD110, SiHLD110

www.vishay.com

Vishay Siliconix

S12-0617-Rev. D, 26-Mar-12

Document Number: 91309

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• For Automatic Insertion

•End Stackable

• Logic-Level Gate Drive

•R

DS(on)

Specified at V

= 4 V and 5 V

• 175 °C Operating Temperature

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

Note

* Lead (Pb)-containing terminations are not RoHS-compliant.

Exemptions may apply.

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable

case style which can be stacked in multiple combinations on

standard 0.1" pin centers. The dual drain serves as a thermal

link to the mounting surface for power dissipation levels up

to 1 W.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 25 V, starting T

= 25 °C, L = 6.4 mH, R

= 25 , I

= 5.6 A (see fig. 12).

c. I

 5.6 A, dI/dt  75 A/μs, V

 V

, T

 175 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) 100

DS(on)

()V

= 5.0 V 0.54

(Max.) (nC) 6.1

(nC) 2.6

(nC) 3.3

Configuration Single

N-Channel MOSFET

HVMDIP

ORDERING INFORMATION

Package HVMDIP

Lead (Pb)-free

IRLD110PbF

SiHLD110-E3

SnPb

IRLD110

SiHLD110

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

100

Gate-Source Voltage V

± 10

Continuous Drain Current V

at 5.0 V

= 25 °C

1.0

= 100 °C 0.70

Pulsed Drain Current

8.0

Linear Derating Factor 0.0083 W/°C

Single Pulse Avalanche Energy

100 mJ

Avalanche Current

1.0 A

Repetitive Avalanche Energy

0.13 mJ

Maximum Power Dissipation T

= 25 °C P

1.3 W

Peak Diode Recovery dV/dt

dV/dt 5.5 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Summary of content (9 pages)

PAGE 1
IRLD110, SiHLD110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt Rating 100 RDS(on) () VGS = 5.0 V • Repetitive Avalanche Rated 0.54 Qg (Max.) (nC) 6.1 • For Automatic Insertion Qgs (nC) 2.6 • End Stackable Qgd (nC) 3.3 • Logic-Level Gate Drive Single Configuration • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature D • Material categorization: For definitions of compliance please see www.vishay.
PAGE 2
IRLD110, SiHLD110 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SYMBOL TYP. MAX. UNIT RthJA - 120 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = 250 μA 100 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.
PAGE 3
IRLD110, SiHLD110 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 μs PULSE WIDTH TA = 25 °C Fig. 1 - Typical Output Characteristics, TA = 25 °C Fig. 3 - Typical Transfer Characteristics 20 μs PULSE WIDTH TA = 175 °C Fig. 2 - Typical Output Characteristics, TA = 175 °C S12-0617-Rev. D, 26-Mar-12 Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91309 3 For technical questions, contact: hvm@vishay.
PAGE 4
IRLD110, SiHLD110 www.vishay.com Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Vishay Siliconix Fig. 7 - Typical Source-Drain Diode Forward Voltage TA = 25 °C TJ = 175 °C SINGLE PULSE Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage S12-0617-Rev. D, 26-Mar-12 Fig. 8 - Maximum Safe Operating Area Document Number: 91309 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
PAGE 5
IRLD110, SiHLD110 www.vishay.com Vishay Siliconix RD VDS VGS D.U.T. ID, Drain Current (A) Rg + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10 - Switching Time Test Circuit VDS 90 % 10 % VGS TA, Ambient Temperature (°C) td(on) td(off) tf Fig. 11 - Switching Time Waveforms Thermal Response (ZthJA) Fig. 9 - Maximum Drain Current vs. Ambient Temperature tr t1, Rectangular Pulse Duration (s) Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient S12-0617-Rev.
PAGE 6
IRLD110, SiHLD110 www.vishay.com Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T Rg + - I AS V DD VDS 10 V 0.01 W tp Fig. 13 - Unclamped Inductive Test Circuit IAS Fig. 14 - Unclamped Inductive Waveforms Fig. 15 - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 16 - Basic Gate Charge Waveform S12-0617-Rev.
PAGE 7
IRLD110, SiHLD110 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Package Information Vishay Siliconix HVM DIP (High voltage) 0.248 [6.29] 0.240 [6.10] 0.043 [1.09] 0.035 [0.89] 0.197 [5.00] 0.189 [4.80] 0.133 [3.37] 0.125 [3.18] 0.180 [4.57] 0.160 [4.06] 0.094 [2.38] 0.086 [2.18] A L 0.160 [4.06] 0.140 [3.56] 0° to 15° 2x 0.017 [0.43] 0.013 [0.33] 0.045 [1.14] 2 x 0.035 [0.89] E min. 0.024 [0.60] 4x 0.020 [0.51] 0.100 [2.54] typ. E max. INCHES MILLIMETERS DIM. MIN. MAX. MIN. A 0.310 0.330 7.87 MAX. 8.38 E 0.300 0.425 7.62 10.79 L 0.270 0.
PAGE 9
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.