Datasheet

www.vishay.com Document Number: 90390
6 S11-1044-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRL630S, SiHL630S
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
R
g
I
AS
0.01 Ω
t
p
D.U.T.
L
V
DS
+
-
V
DD
5 V
Vary t
p
to obtain
required I
AS
I
AS
V
DS
V
DD
V
DS
t
p
0
100
200
300
400
500
600
25 50 75 100 125 150
V=50V
Starting T , Juntion Temperature (°C)
J
E , Single Pulse Avalanche Energy (mJ)
AS
DD
I
TOP 9.0A
5.7A
BOTTOM 4.0A
D
A
Q
GS
Q
GD
Q
G
V
G
Charge
5 V
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-