Datasheet

www.vishay.com Document Number: 91295
4 S11-0518-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFZ48R, SiHFZ48R
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
1
10
100
1000
0.1 1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
)A(
tnerru
C
n
iar
D
,
I
)A(
tnerru
C
n
iar
D
,
I
DS
D
10us
100us
1ms
10ms