Datasheet

Document Number: 91287 www.vishay.com
S11-1054-Rev. C, 30-May-11 3
This document is subject to change without notice.
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IRFS9N60A, SiHFS9N60A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.7V
1
10
100
1 10 100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.7V
0.1
1
10
100
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
r
DS(on)
, Drain-to-Source On Resistance
(Normalized)
J
°
V =
I =
GS
D
10V
9.2A